Field effect transistors (FETs, MOSFETs) IPD60R600P7SAUMA1
Images are for reference only,
see technical documentation
see technical documentation
53 pcs. from the central warehouse, term 11-12 days
550 ֏
Minimal order qty 2 pcs.
from 5 pcs. —
362 ֏
from 10 pcs. —
302 ֏
from 53 pcs. —
276 ֏
2 pcs.
amount of 1 100 ֏
Alternative offers2
The same product with different prices and delivery dates
Description
Reviews
Description Transistor: N-MOSFET; Field; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Technical parameters
| Maximum gate-source voltage Uzi max., V | ±20V | |
| Maximum power dissipation Psi max..W | 30 | |
| Features | - | |
| Weight, g | 0.01 |
Technical documentation
Technical information
pdf, 912 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 28 April1 | free |
| HayPost | 1 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
