IPP045N10N3G, N-MOSFET Transistor 100V 137A 214W 0.0077Ohm [TO-220.]
![IPP045N10N3G, N-MOSFET Transistor 100V 137A 214W 0.0077Ohm [TO-220.]](https://static.chipdip.ru/lib/413/DOC005413066.jpg)
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see technical documentation
see technical documentation
SKU
9001634774
Structure
N-channel
Slope of characteristic, S
145
Housing
TO-220
Weight, g
2
All parameters
IPP045N10N3G
pdf, 1029 КБ
669 pcs. from the central warehouse, term 11 days
351 ֏
from 10 pcs. —
324 ֏
1 pcs.
amount of 351 ֏
Alternative offers1
The same product with different prices and delivery dates
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 100 | |
| Maximum drain-source current at 25 C Isi max..A | 137 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 7.7 mOhm/50A, 6V | |
| Maximum power dissipation Psi max..W | 214 | |
| Slope of characteristic, S | 145 | |
| Housing | TO-220 | |
| Weight, g | 2 |
Technical documentation
IPP045N10N3G
pdf, 1029 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 22 December1 | free |
| HayPost | 26 December1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
