IR2102PBF, High and Low Level Key Driver, [DIP-8]
![IR2102PBF, High and Low Level Key Driver, [DIP-8]](https://static.chipdip.ru/lib/304/DOC005304707.jpg)
Images are for reference only,
see technical documentation
see technical documentation
SKU
8226
Configuration
Half-Bridge
Channel type
independent
Number of channels
2
Type of controlled shutter
IGBT, N-CH MOSFET
Supply voltage, V
10…20
Logic voltage (VIL), V
0.8
All parameters
Datasheet IR2101(S)/IR2102(S) & (PbF)
pdf, 140 КБ
All documents
120 pcs. from the central warehouse, term 11 days
1 700 ֏
1 140 ֏
from 5 pcs. —
1 120 ֏
1 pcs.
amount of 1 140 ֏
Alternative offers1
The same product with different prices and delivery dates
IC Description: driver; half-bridge MOSFET; high-/low-side,gate controller Specifications
| Category | The chip |
| Type | the driver |
| View | MOSFET |
Technical parameters
| Configuration | Half-Bridge | |
| Channel type | independent | |
| Number of channels | 2 | |
| Type of controlled shutter | IGBT, N-CH MOSFET | |
| Supply voltage, V | 10…20 | |
| Logic voltage (VIL), V | 0.8 | |
| Logic voltage (VIH), V | 3 | |
| Peak output current rise (Source), A | 0.21 | |
| Peak output current slope (Sink), A | 0.36 | |
| Input type | inverting | |
| Maximum bias voltage, V | 600 | |
| Rise Time, ns | 100 | |
| Nominal decay time (Fall Time), ns | 50 | |
| Operating temperature, ° C | -40…+150(TJ) | |
| Housing | DIP-8(0.300 inch) | |
| Weight, g | 1 |
Technical documentation
Datasheet IR2101(S)/IR2102(S) & (PbF)
pdf, 140 КБ
Using IR monolithic high voltage gate drivers
pdf, 356 КБ
Datasheet
pdf, 138 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 24 November1 | free |
| HayPost | 28 November1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
