IR2213PBF, Driver IGBT / N-MOSFET, Half-Bridge, 2A / 2.5A [DIP-14]
![IR2213PBF, Driver IGBT / N-MOSFET, Half-Bridge, 2A / 2.5A [DIP-14]](https://static.chipdip.ru/lib/304/DOC005304667.jpg)
Images are for reference only,
see technical documentation
see technical documentation
SKU
8434
Configuration
Half-Bridge
Channel type
independent
Number of channels
2
Type of controlled shutter
IGBT, N-CH MOSFET
Supply voltage, V
12…20
Logic voltage (VIL), V
6
All parameters
IR2213
pdf, 144 КБ
All documents
341 pcs. from the central warehouse, term 6 days
7 900 ֏
6 000 ֏
1 pcs.
amount of 6 000 ֏
Alternative offers2
The same product with different prices and delivery dates
IC description: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Specifications
| Category | The chip |
| Type | the driver |
| View | MOSFET |
Technical parameters
| Configuration | Half-Bridge | |
| Channel type | independent | |
| Number of channels | 2 | |
| Type of controlled shutter | IGBT, N-CH MOSFET | |
| Supply voltage, V | 12…20 | |
| Logic voltage (VIL), V | 6 | |
| Logic voltage (VIH), V | 9.5 | |
| Peak output current rise (Source), A | 2 | |
| Peak output current slope (Sink), A | 2.5 | |
| Input type | non-inverting | |
| Maximum bias voltage, V | 1200 | |
| Rise Time, ns | 25 | |
| Nominal decay time (Fall Time), ns | 17 | |
| Operating temperature, ° C | -55…+150(TJ) | |
| Housing | DIP-14(0.300 inch) | |
| Weight, g | 1.9 |
Technical documentation
IR2213
pdf, 144 КБ
Using IR monolithic high voltage gate drivers
pdf, 356 КБ
Datasheet IR2213
pdf, 433 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 25 November1 | free |
| HayPost | 29 November1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
