IRF1010NPBF, N-MOSFET Transistor 55V 75/85A 180W 0.011Ohm [TO-220.]

Images are for reference only,
see technical documentation

SKU

2031

Brand

Structure

N-Channel

Slope of characteristic, S

Housing

TO-220AB

Features

auto application

Gate threshold voltage

2…4

Weight, g

2.5

All parameters

pdf, 108 КБ

All documents

463 pcs. from the central warehouse, term 7 days

1 100 ֏

640 ֏

from 5 pcs. — 590 ֏

1 pcs. amount of 640 ֏

Description

Description of Transistor: N-MOSFET, Field, 55V, 72A, 130W, TO220AB Specifications

Structure	N-Channel
Maximum drain-source voltage Usi, V	55
Maximum drain-source current at 25 C Isi max..A	84
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.011 Ohm / 43A, 10V
Maximum power dissipation Psi max..W	180
Slope of characteristic, S	30
Housing	TO-220AB
Features	auto application
Gate threshold voltage	2…4
Weight, g	2.5