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IRF4905PBF, Transistor, P-channel 55V 74A [TO-220AB]

Images are for reference only,
see technical documentation

SKU

5409

Brand

INFINEON TECHNOLOGIES AG.

Structure

P-Channel

Slope of characteristic, S

Housing

TO-220

Gate threshold voltage

2…4

Weight, g

All parameters

IRF4905 datasheet

pdf, 108 КБ

All documents

4 pcs. from stock Yerevan, Today

1423 pcs. from the central warehouse, term 6 days

730 ֏

490 ֏

from 50 pcs. — 416 ֏

1 pcs. amount of 490 ֏

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Description

Reviews

Infineon's HEXFET® line of discrete power MOSFETS includes P-channel devices in surface-mounted and lead-coated enclosures and form factors that allow you to solve almost any board layout and thermal design tasks.

Technical parameters

Structure	P-Channel
Maximum drain-source voltage Usi, V	55
Maximum drain-source current at 25 C Isi max..A	74
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.02Ohms/38A, 10V
Maximum power dissipation Psi max..W	200
Slope of characteristic, S	21
Housing	TO-220
Gate threshold voltage	2…4
Weight, g	2