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IRF4905STRLPBF, 55V 42A 170W P-MOSFET Transistor [D2PAK.]

Images are for reference only,
see technical documentation

SKU

9000539515

Brand

INFINEON TECHNOLOGIES AG.

Structure

P-Channel

Slope of characteristic, S

Housing

d2pak

Features

automotive applications

Gate threshold voltage

2…4

Weight, g

All parameters

Datasheet IRF4905LPBF

pdf, 367 КБ

All documents

18 pcs. from stock Yerevan, Today

640 pcs. from the central warehouse, term 7 days

780 ֏

from 50 pcs. — 660 ֏

1 pcs. amount of 780 ֏

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Description

Reviews

P-channel power MOSFET from 40 V to 55 V, Infineon
Infineon's HEXFET® line of discrete power MOSFETS includes P-channel devices in surface-mounted and lead-coated enclosures and form factors that can solve virtually any board layout and thermal design tasks. The full-range resistance test reduces conduction losses, allowing developers to ensure optimal system efficiency.

Technical parameters

Structure	P-Channel
Maximum drain-source voltage Usi, V	55
Maximum drain-source current at 25 C Isi max..A	42
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.02Ohms/42A, 10V
Maximum power dissipation Psi max..W	170
Slope of characteristic, S	19
Housing	d2pak
Features	automotive applications
Gate threshold voltage	2…4
Weight, g	1