IRF640PBF, Transistor, N-channel 200V 18A [TO-220AB.]

Images are for reference only,
see technical documentation

SKU

2943

Brand

Structure

N-Channel

Slope of characteristic, S

6.8

Housing

TO-220AB

Features

automotive applications

Gate threshold voltage

2…4

Weight, g

2.5

All parameters

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306 pcs. from the central warehouse, term 11 days

1 700 ֏

530 ֏

from 15 pcs. — 450 ֏

1 pcs. amount of 530 ֏

Description

Description N-MOSFET Transistor, Field, 200V, 11A, 125W, TO220AB Specifications

Structure	N-Channel
Maximum drain-source voltage Usi, V	200
Maximum drain-source current at 25 C Isi max..A	18
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.18 Ohm / 11A, 10V
Maximum power dissipation Psi max..W	150
Slope of characteristic, S	6.8
Housing	TO-220AB
Features	automotive applications
Gate threshold voltage	2…4
Weight, g	2.5