IRF7304TRPBF, HEXFET Transistor, 2P channels, 20V, 4.3A, 0.090ohms [SOIC-8.] [EOL]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9000539510
Structure
2 P-Channel
Slope of characteristic, S
4
Housing
SOIC-8
Features
automotive applications
Weight, g
0.15
All parameters
IRF7304
pdf, 117 КБ
All documents
7 pcs. from the central warehouse, term 6 days
287 ֏
from 15 pcs. —
242 ֏
1 pcs.
amount of 287 ֏
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MOSFET, DUAL P-channel, -20 V, -4.3 A, SOIC-8; Transistor polarity: Dual-channel P-channel; Constant drain current Id: -4.3 A; Drain source voltage Vds: -20 V; Switch-on resistance Rds(on): 0.09 ohms; Test voltage Rds(on) Vgs Voltage: -4.5 V; Threshold voltage Vgs: -700 mV; Power dissipation Pd: 2 W; Transistor housing type: SOIC; Number of contacts: 8; Maximum operating temperature: 150°C; Product Range: -; Automotive Qualification Standard:-; MSL: MSL 1 - Unlimited; SVHC: Without SVHC (June 27-2018)
Technical parameters
| Structure | 2 P-Channel | |
| Maximum drain-source voltage Usi, V | 20 | |
| Maximum drain-source current at 25 C Isi max..A | 4.7 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.09 ohm/2.2A, 4.5V | |
| Maximum power dissipation Psi max..W | 1.4 | |
| Slope of characteristic, S | 4 | |
| Housing | SOIC-8 | |
| Features | automotive applications | |
| Weight, g | 0.15 |
Technical documentation
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 21 July1 | free |
| HayPost | 24 July1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



