IRF7309TRPBF, Transistor, N/P Channels 30V 4A/-3A [SO-8]

IRF7309TRPBF, Transistor, N/P Channels 30V 4A/-3A [SO-8]
Images are for reference only,
see technical documentation
SKU
9000562898
Structure
N-Channel, P-Channel
Slope of characteristic, S
5.2/2.5
Housing
SOIC-8
Weight, g
0.15
All parameters
Datasheet IRF7309TRPBF
pdf, 2092 КБ
All documents
645 pcs. from the central warehouse, term 6 days
730 ֏
322 ֏
from 25 pcs.273 ֏
1 pcs. amount of 322 ֏
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Description The IRF7309TRPBF field effect transistor from the manufacturer INFINEON is a high–quality component for modern electronics. The installation of this transistor is made in the SMD format, which provides ease of use and allows it to be integrated into various printed circuit boards. With a drain current of 4 A and a drain-source voltage of 30 V, this element provides reliable operation in a wide range of applications. The power of the transistor is 1.4 watts, and the resistance in the open state is only 0.05 ohms, which indicates its high efficiency. The N+P-MOSFET type indicates the combined use of both an N-channel and a P-channel MOSFET in a single SO8 package. This makes the IRF7309TRPBF an ideal choice for developing energy efficient circuits. Product code to search for: IRF7309TRPBF. Specifications
Category Transistor
Type field
View N+P-MOSFET
Mounting SMD
Drain current, A 4
Drain-source voltage, V 30
Power, W 1.4
Resistance in the open state, Ohms 0.05
Body SO8
Structure N-Channel, P-Channel
Maximum drain-source voltage Usi, V 30
Maximum drain-source current at 25 C Isi max..A 4.9/3.6
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.05 ohm/2.4A, 10V/0.1 ohm/1.8A, 10V
Maximum power dissipation Psi max..W 1.4
Slope of characteristic, S 5.2/2.5
Housing SOIC-8
Features complementary pair of transistors
Weight, g 0.15
Datasheet IRF7309TRPBF
pdf, 2092 КБ
Technical information
pdf, 2072 КБ
Datasheet IRF7309
pdf, 2059 КБ

Delivery to Yerevan

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HayPost 2 May1 1 650 ֏2
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2 for parcels weighing up to 1 kg