IRF730PBF, Transistor, N-channel 400V 5.5A [TO-220AB]

Images are for reference only,
see technical documentation

SKU

8431

Brand

Structure

N-Channel

Slope of characteristic, S

Housing

TO-220AB

Gate threshold voltage

2…4

Weight, g

2.5

All parameters

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All documents

1094 pcs. from the central warehouse, term 7 days

730 ֏

274 ֏

from 15 pcs. — 232 ֏

1 pcs. amount of 274 ֏

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Description

MOSFET 400V N-CH HEXFET

Structure	N-Channel
Maximum drain-source voltage Usi, V	400
Maximum drain-source current at 25 C Isi max..A	5.5
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	1 Ohm / 3.3A, 10V
Maximum power dissipation Psi max..W	74
Slope of characteristic, S	3
Housing	TO-220AB
Gate threshold voltage	2…4
Weight, g	2.5