IRF7311TR, 2N-MOSFET Transistor 30V 9A 1.6W [SOP-8.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001633824
Structure
2N channels
Slope of characteristic, S
32
Housing
SOIC-8
Features
Enhancement Mode
Gate threshold voltage
1…2.5
Weight, g
0.196
All parameters
IRF7311TR
pdf, 2085 КБ
2698 pcs. from the central warehouse, term 11 days
77 ֏
from 100 pcs. —
71 ֏
1 pcs.
amount of 77 ֏
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Technical parameters
| Structure | 2N channels | |
| Maximum drain-source voltage Usi, V | 30 | |
| Maximum drain-source current at 25 C Isi max..A | 9 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.013ohms/15A, 10V | |
| Maximum power dissipation Psi max..W | 1.6 | |
| Slope of characteristic, S | 32 | |
| Housing | SOIC-8 | |
| Features | Enhancement Mode | |
| Gate threshold voltage | 1…2.5 | |
| Weight, g | 0.196 |
Technical documentation
IRF7311TR
pdf, 2085 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 22 December1 | free |
| HayPost | 26 December1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



