IRF740STRLPBF, N-MOSFET Transistor 400V 10A 125W 0.55Ohm [D2PAK.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
4432
Structure
N-Channel
Slope of characteristic, S
4.9
Housing
D2PAK(2 Leads+Tab)
Features
automotive applications
Gate threshold voltage
4
Weight, g
2.5
All parameters
Technical information
pdf, 198 КБ
All documents
463 pcs. from the central warehouse, term 11 days
660 ֏
from 5 pcs. —
610 ֏
1 pcs.
amount of 660 ֏
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Description
Reviews
MOSFET Transistor N-CH 400V 10A 3-pin (2+Tab) D2PAK T/R
Technical parameters
| Structure | N-Channel | |
| Maximum drain-source voltage Usi, V | 400 | |
| Maximum drain-source current at 25 C Isi max..A | 10 | |
| Maximum gate-source voltage Uzi max., V | ±30 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.55 Ohm / 6A, 10V | |
| Maximum power dissipation Psi max..W | 125 | |
| Slope of characteristic, S | 4.9 | |
| Housing | D2PAK(2 Leads+Tab) | |
| Features | automotive applications | |
| Gate threshold voltage | 4 | |
| Weight, g | 2.5 |
Technical documentation
Technical information
pdf, 198 КБ
Technical information
pdf, 193 КБ
Technical information
pdf, 173 КБ
Datasheet IRF740S, SiHF740S
pdf, 193 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 1 June1 | free |
| HayPost | 4 June1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg


