IRF9630PBF, Transistor, P-channel 200V 6.5A [TO-220AB]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9151
Structure
P-Channel
Slope of characteristic, S
2.2
Housing
TO-220AB
Gate threshold voltage
-4
Weight, g
2.5
All parameters
IRF9630PBF Datasheet
pdf, 3586 КБ
All documents
177 pcs. from the central warehouse, term 7 days
910 ֏
397 ֏
from 15 pcs. —
337 ֏
1 pcs.
amount of 397 ֏
Alternative offers2
The same product with different prices and delivery dates
Description
Reviews
MOSFET P-Chan 200V 6.5 Amp
Technical parameters
| Structure | P-Channel | |
| Maximum drain-source voltage Usi, V | 200 | |
| Maximum drain-source current at 25 C Isi max..A | 6.5 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.8 Ohm / 3.9A, 10V | |
| Maximum power dissipation Psi max..W | 74 | |
| Slope of characteristic, S | 2.2 | |
| Housing | TO-220AB | |
| Gate threshold voltage | -4 | |
| Weight, g | 2.5 |
Technical documentation
IRF9630PBF Datasheet
pdf, 3586 КБ
Datasheet IRF9630
pdf, 153 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 16 June1 | free |
| HayPost | 19 June1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg


