IRF9630PBF, Transistor, P-channel 200V 6.5A [TO-220AB]

IRF9630PBF, Transistor, P-channel 200V 6.5A [TO-220AB]
Images are for reference only,
see technical documentation
SKU
9151
Structure
P-Channel
Slope of characteristic, S
2.2
Housing
TO-220AB
Gate threshold voltage
-4
Weight, g
2.5
All parameters
IRF9630PBF Datasheet
pdf, 3586 КБ
All documents
177 pcs. from the central warehouse, term 7 days
910 ֏
397 ֏
from 15 pcs.337 ֏
1 pcs. amount of 397 ֏
Alternative offers2
The same product with different prices and delivery dates
MOSFET P-Chan 200V 6.5 Amp
Structure P-Channel
Maximum drain-source voltage Usi, V 200
Maximum drain-source current at 25 C Isi max..A 6.5
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.8 Ohm / 3.9A, 10V
Maximum power dissipation Psi max..W 74
Slope of characteristic, S 2.2
Housing TO-220AB
Gate threshold voltage -4
Weight, g 2.5
IRF9630PBF Datasheet
pdf, 3586 КБ
Datasheet IRF9630
pdf, 153 КБ

Delivery to Yerevan

Office CHIP AND DIP 16 June1 free
HayPost 19 June1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg