IRFB4310Z, N-MOSFET Transistor 100V 120/127A 250W 0.006Ohm [TO-220.]

IRFB4310Z, N-MOSFET Transistor 100V 120/127A 250W 0.006Ohm [TO-220.]
Images are for reference only,
see technical documentation
SKU
9001634776
Structure
N-channel
Slope of characteristic, S
150
Housing
TO-220
Gate threshold voltage
2…4
Weight, g
2
All parameters
IRFB4310Z
pdf, 830 КБ
39 pcs. from the central warehouse, term 7-8 days
408 ֏
from 10 pcs.377 ֏
1 pcs. amount of 408 ֏
Alternative offers1
The same product with different prices and delivery dates
Structure N-channel
Maximum drain-source voltage Usi, V 100
Maximum drain-source current at 25 C Isi max..A 120
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.006ohms/75A, 10V
Maximum power dissipation Psi max..W 250
Slope of characteristic, S 150
Housing TO-220
Gate threshold voltage 2…4
Weight, g 2
IRFB4310Z
pdf, 830 КБ

Delivery to Yerevan

Office CHIP AND DIP 17 March1 free
HayPost 20 March1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg