IRFBE20PBF, Transistor, N-channel 800V 1.8A [TO-220AB]

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see technical documentation

SKU

10825

Brand

Structure

N-channel

Slope of characteristic, S

0.8

Housing

TO-220AB

Gate threshold voltage

Weight, g

2.5

All parameters

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All documents

176 pcs. from the central warehouse, term 8 days

1 040 ֏

560 ֏

from 15 pcs. — 466 ֏

1 pcs. amount of 560 ֏

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MOSFET 800V Single N-Channel HEXFET

Structure	N-channel
Maximum drain-source voltage Usi, V	800
Maximum drain-source current at 25 C Isi max..A	1.8
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	6.5 Ohm / 1.1A, 10V
Maximum power dissipation Psi max..W	54
Slope of characteristic, S	0.8
Housing	TO-220AB
Gate threshold voltage	4
Weight, g	2.5