IRFD120PBF, N-MOSFET Transistor 100V 1.3A 1.3W 0.27Ohm [HVMDIP.] [EOL]

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see technical documentation

SKU

5978

Brand

Structure

N-channel

Slope of characteristic, S

0.8

Housing

HVMDIP-4

Gate threshold voltage

Weight, g

0.6

All parameters

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All documents

668 pcs. from the central warehouse, term 9 days

183 ֏

from 10 pcs. — 166 ֏

1 pcs. amount of 183 ֏

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Description Reviews

Description Transistor: N-MOSFET, Field-effect, 100V, 0.94A, 1.3W, DIP4 Characteristics

Structure	N-channel
Maximum drain-source voltage Usi, V	100
Maximum drain-source current at 25 C Isi max..A	1.3
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.27 Ohm / 0.78A, 10V
Maximum power dissipation Psi max..W	1.3
Slope of characteristic, S	0.8
Housing	HVMDIP-4
Gate threshold voltage	4
Weight, g	0.6