IRFL9014TRPBF, Transistor, P-channel 60V 1.8A [SOT-223] (= IRFL9014PBF)
Images are for reference only,
see technical documentation
see technical documentation
SKU
5454
Structure
P-channel
Slope of characteristic, S
1.3
Housing
SOT-223
Gate threshold voltage
-4
Weight, g
0.39
All parameters
9014
pdf, 166 КБ
All documents
10 pcs. from stock Yerevan, Today
3168 pcs. from the central warehouse, term 6 days
970 ֏
294 ֏
from 50 pcs. —
248 ֏
1 pcs.
amount of 294 ֏
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The same product with different prices and delivery dates
Description Transistor P-MOSFET, Field, 60V 1.8A 3.1W 0.5Ohm SOT223 Specifications
| Category | Transistor |
| Type | field |
| View | MOSFET |
Technical parameters
| Structure | P-channel | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 1.8 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.5 Ohm / 1.1A, 10V | |
| Maximum power dissipation Psi max..W | 3.1 | |
| Slope of characteristic, S | 1.3 | |
| Housing | SOT-223 | |
| Gate threshold voltage | -4 | |
| Weight, g | 0.39 |
Technical documentation
9014
pdf, 166 КБ
Datasheet IRFL9014, SiHFL9014
pdf, 173 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | Today1 | free |
| HayPost | 23 November1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



