IRFP3710PBF, Transistor, N-channel 100V 51A [TO-247AC]

Images are for reference only,
see technical documentation

SKU

10170

Brand

Structure

N-Channel

Slope of characteristic, S

Housing

TO-247AC

Gate threshold voltage

Weight, g

7.5

All parameters

pdf, 235 КБ

All documents

962 pcs. from the central warehouse, term 11 days

2 430 ֏

910 ֏

from 15 pcs. — 770 ֏

1 pcs. amount of 910 ֏

Alternative offers2

The same product with different prices and delivery dates

Description

Infineon's HEXFET® line of discrete power MOSFETS includes N-channel surface mount devices and lead enclosures.

Structure	N-Channel
Maximum drain-source voltage Usi, V	100
Maximum drain-source current at 25 C Isi max..A	49
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.025 Ohm / 28A, 10V
Maximum power dissipation Psi max..W	180
Slope of characteristic, S	20
Housing	TO-247AC
Gate threshold voltage	4
Weight, g	7.5