IRFR1018ETR, N-MOSFET Transistor 60V 56A [TO-252.]

IRFR1018ETR, N-MOSFET Transistor 60V 56A [TO-252.]
Images are for reference only,
see technical documentation
SKU
9001634743
Structure
N-Channel
Slope of characteristic, S
110
Housing
TO-220
Features
powerful high frequency
Gate threshold voltage
2…4
Weight, g
0.45
All parameters
IRFR1018ETR-UMW
pdf, 527 КБ
2410 pcs. from the central warehouse, term 8 days
153 ֏
from 50 pcs.146 ֏
1 pcs. amount of 153 ֏
Alternative offers2
The same product with different prices and delivery dates
Structure N-Channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 47
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.0084ohms/47A, 10V
Maximum power dissipation Psi max..W 110
Slope of characteristic, S 110
Housing TO-220
Features powerful high frequency
Gate threshold voltage 2…4
Weight, g 0.45
IRFR1018ETR-UMW
pdf, 527 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 March1 free
HayPost 27 March1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg