IRFR1018ETR, N-MOSFET Transistor 60V 56A [TO-252.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001634743
Structure
N-Channel
Slope of characteristic, S
110
Housing
TO-220
Features
powerful high frequency
Gate threshold voltage
2…4
Weight, g
0.45
All parameters
IRFR1018ETR-UMW
pdf, 527 КБ
2410 pcs. from the central warehouse, term 8 days
153 ֏
from 50 pcs. —
146 ֏
1 pcs.
amount of 153 ֏
Alternative offers2
The same product with different prices and delivery dates
Description
Reviews
Technical parameters
| Structure | N-Channel | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 47 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.0084ohms/47A, 10V | |
| Maximum power dissipation Psi max..W | 110 | |
| Slope of characteristic, S | 110 | |
| Housing | TO-220 | |
| Features | powerful high frequency | |
| Gate threshold voltage | 2…4 | |
| Weight, g | 0.45 |
Technical documentation
IRFR1018ETR-UMW
pdf, 527 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 23 March1 | free |
| HayPost | 27 March1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



