IRFR5505TRPBF, Transistor P-MOSFET 55V 18A [DPAK]
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see technical documentation
see technical documentation








SKU
9000964230
Structure
P-channel
Slope of characteristic, S
4.2
Housing
DPAK(2 Leads+Tab)
Weight, g
0.42
All parameters
Datasheet
pdf, 281 КБ
All documents
407 pcs. from the central warehouse, term 8 days
196 ֏
from 15 pcs. —
164 ֏
1 pcs.
amount of 196 ֏
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The same product with different prices and delivery dates
Description
MOSFET 1P-CH -55V HEXFET 110mOhms 21.3nC
Technical parameters
Structure | P-channel | |
Maximum drain-source voltage Usi, V | 55 | |
Maximum drain-source current at 25 C Isi max..A | 18 | |
Maximum gate-source voltage Uzi max., V | ±20 | |
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.11 ohm/9.6A, 10V | |
Maximum power dissipation Psi max..W | 57 | |
Slope of characteristic, S | 4.2 | |
Housing | DPAK(2 Leads+Tab) | |
Weight, g | 0.42 |
Technical documentation
Delivery terms
Delivery to Yerevan
Office CHIP AND DIP | 28 April1 | free |
HayPost | 2 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg