IRFZ14PBF, Transistor, N-channel 60V 10A [TO-220AB]

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see technical documentation

SKU

352

Brand

Structure

N-Channel

Slope of characteristic, S

2.4

Housing

TO-220AB

Gate threshold voltage

Weight, g

2.5

All parameters

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All documents

510 pcs. from the central warehouse, term 6 days

590 ֏

520 ֏

from 15 pcs. — 490 ֏

1 pcs. amount of 520 ֏

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Description

Description N-MOSFET Transistor, field-effect, 60V, 7.2A, 43W, TO220AB Specifications

Structure	N-Channel
Maximum drain-source voltage Usi, V	60
Maximum drain-source current at 25 C Isi max..A	10
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.2 Ohm / 6A, 10V
Maximum power dissipation Psi max..W	43
Slope of characteristic, S	2.4
Housing	TO-220AB
Gate threshold voltage	4
Weight, g	2.5