IRLML0030TRPBF, N-MOSFET Transistor 30V 5.3A 1.3W 0.027Ohm [SOT-23-3.]

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see technical documentation

SKU

9001155201

Brand

Structure

N-channel

Slope of characteristic, S

9.5

Housing

SOT-23-3

Gate threshold voltage

1.3…2.3

Weight, g

0.05

All parameters

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8065 pcs. from the central warehouse, term 7 days

69 ֏

from 100 pcs. — 60 ֏

1 pcs. amount of 69 ֏

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Description

Field effect transistor N-channel 30V 1.3W

Structure	N-channel
Maximum drain-source voltage Usi, V	30
Maximum drain-source current at 25 C Isi max..A	5.3
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.027 Ohm / 5.2A, 10V
Maximum power dissipation Psi max..W	1.3
Slope of characteristic, S	9.5
Housing	SOT-23-3
Gate threshold voltage	1.3…2.3
Weight, g	0.05