IRLML0060TRPBF, N-MOSFET Transistor 60V 2.7A 1.25W 0.092ohms [SOT-23-3.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9000970122
Brand
Structure
N-Channel
Housing
Micro-3/SOT-23-3
Features
Low Power Portable Electronics
Weight, g
0.05
All parameters
Datasheet
pdf, 818 КБ
All documents
16 pcs. from stock Yerevan, 1 day
6690 pcs. from the central warehouse, term 8 days
79 ֏
52 ֏
from 100 pcs. —
48 ֏
1 pcs.
amount of 52 ֏
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Description
Reviews
Field-effect N-channel transistor 60V 2.7A 1.25W, 0.116 ohms
Technical parameters
| Structure | N-Channel | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 2.7 | |
| Maximum gate-source voltage Uzi max., V | ±16 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.092 Ohm / 2.7A, 10V | |
| Maximum power dissipation Psi max..W | 1.25 | |
| Housing | Micro-3/SOT-23-3 | |
| Features | Low Power Portable Electronics | |
| Weight, g | 0.05 |
Technical documentation
Datasheet
pdf, 818 КБ
IRLML0060-SOT-23 d
pdf, 963 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | Tomorrow1 | free |
| HayPost | 20 March1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



