IRLML0100TRPBF, N-MOSFET Transistor 100V 1.6A 1.3W 0.22Ohm [SOT-23-3.]

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see technical documentation

SKU

9001155202

Brand

Structure

N-channel

Slope of characteristic, S

5.7

Housing

SOT-23-3

Gate threshold voltage

1…2.5

Weight, g

0.05

All parameters

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12133 pcs. from the central warehouse, term 10 days

71 ֏

from 100 pcs. — 64 ֏

1 pcs. amount of 71 ֏

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Description

Field effect transistor N-channel 100V 1.6A 1.3W, 0.22 Ohm

Structure	N-channel
Maximum drain-source voltage Usi, V	100
Maximum drain-source current at 25 C Isi max..A	1.6
Maximum gate-source voltage Uzi max., V	±16
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.22 Ohm / 1.6A, 10V
Maximum power dissipation Psi max..W	1.3
Slope of characteristic, S	5.7
Housing	SOT-23-3
Gate threshold voltage	1…2.5
Weight, g	0.05