IRLML2502TRPBF, Transistor N-MOSFET 20V 4.2A [SOT-23-23]

Photo 1/4 IRLML2502TRPBF, Transistor N-MOSFET 20V 4.2A [SOT-23-23]
Images are for reference only,
see technical documentation
SKU
9000970124
Brand
Structure
N-channel
Slope of characteristic, S
5.8
Housing
Micro-3/SOT-23-3
Weight, g
0.03
All parameters
Datasheet
pdf, 7134 КБ
All documents
12773 pcs. from the central warehouse, term 7 days
38 ֏
from 100 pcs.33 ֏
1 pcs. amount of 38 ֏
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Description

Field effect transistor N-channel 20V 4.2A SOT-23

Technical parameters

Structure N-channel
Maximum drain-source voltage Usi, V 20
Maximum drain-source current at 25 C Isi max..A 4.2
Maximum gate-source voltage Uzi max., V ±12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.045 Ohm / 4.2A, 4.5V
Maximum power dissipation Psi max..W 1.25
Slope of characteristic, S 5.8
Housing Micro-3/SOT-23-3
Weight, g 0.03

Technical documentation

Datasheet
pdf, 7134 КБ
Datasheet IRLML2502
pdf, 7079 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 5 May1 free
HayPost 9 May1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg