IRLML2502TRPBF, Transistor N-MOSFET 20V 4.2A [SOT-23-23]
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see technical documentation
see technical documentation




SKU
9000970124
Brand
Structure
N-channel
Slope of characteristic, S
5.8
Housing
Micro-3/SOT-23-3
Weight, g
0.03
All parameters
Datasheet
pdf, 7134 КБ
All documents
12773 pcs. from the central warehouse, term 7 days
38 ֏
from 100 pcs. —
33 ֏
1 pcs.
amount of 38 ֏
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Description
Field effect transistor N-channel 20V 4.2A SOT-23
Technical parameters
Structure | N-channel | |
Maximum drain-source voltage Usi, V | 20 | |
Maximum drain-source current at 25 C Isi max..A | 4.2 | |
Maximum gate-source voltage Uzi max., V | ±12 | |
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.045 Ohm / 4.2A, 4.5V | |
Maximum power dissipation Psi max..W | 1.25 | |
Slope of characteristic, S | 5.8 | |
Housing | Micro-3/SOT-23-3 | |
Weight, g | 0.03 |
Technical documentation
Datasheet
pdf, 7134 КБ
Datasheet IRLML2502
pdf, 7079 КБ
Delivery terms
Delivery to Yerevan
Office CHIP AND DIP | 5 May1 | free |
HayPost | 9 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg