IRLML2502TRPBF, N-MOSFET Transistor 20V 4.2A 1.25W 0.045Ohm [SOT-23-3.]

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see technical documentation

SKU

9000970124

Brand

Structure

N-Channel

Slope of characteristic, S

5.8

Housing

Micro-3/SOT-23-3

Features

Low Power Portable Electronics

Gate threshold voltage

0.6...1.2 V

Weight, g

0.03

All parameters

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9675 pcs. from the central warehouse, term 11 days

140 ֏

45 ֏

from 100 pcs. — 39 ֏

1 pcs. amount of 45 ֏

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Description

Field effect transistor N-channel 20V 4.2A SOT-23

Structure	N-Channel
Maximum drain-source voltage Usi, V	20
Maximum drain-source current at 25 C Isi max..A	4.2
Maximum gate-source voltage Uzi max., V	±12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.045 Ohm / 4.2A, 4.5V
Maximum power dissipation Psi max..W	1.25
Slope of characteristic, S	5.8
Housing	Micro-3/SOT-23-3
Features	Low Power Portable Electronics
Gate threshold voltage	0.6...1.2 V
Weight, g	0.03