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IRLR024NPBF, Transistor, N-channel 55V 17A logic [D-PAK] [EOL]

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see technical documentation

SKU

684

Brand

International Rectifier

Structure

N-Channel

Slope of characteristic, S

8.3

Housing

dpak

Features

crystal

Gate threshold voltage

Weight, g

0.4

All parameters

Technical information

pdf, 308 КБ

All documents

2 pcs. from the central warehouse, term 7 days

700 ֏

1 pcs. amount of 700 ֏

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Description

Reviews

MOSFET, N-channel, 55 V, 17 A, TO-252AA-3; Transistor polarity: N-channel; Constant drain current Id:17 A; Drain source voltage Vds: 55 V; Switch-on resistance Rds(on): 0.065 ohms; Test voltage Rds(on) Vgs:10 V; Threshold voltage Vgs:2 In; By

Technical parameters

Structure	N-Channel
Maximum drain-source voltage Usi, V	55
Maximum drain-source current at 25 C Isi max..A	17
Maximum gate-source voltage Uzi max., V	±16
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.065 ohm at 10a, 10v
Maximum power dissipation Psi max..W	44
Slope of characteristic, S	8.3
Housing	dpak
Features	crystal
Gate threshold voltage	2
Weight, g	0.4