IRLR110PBF, Transistor, N-channel 100V 4.3A logic [D-PAK]

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see technical documentation

SKU

7191

Brand

Structure

N-channel

Slope of characteristic, S

2.3

Housing

DPAK(2 Leads+Tab)

Gate threshold voltage

Weight, g

0.4

All parameters

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All documents

429 pcs. from the central warehouse, term 11 days

467 ֏

334 ֏

from 15 pcs. — 283 ֏

1 pcs. amount of 334 ֏

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Description

Description N-MOSFET Transistor, field-effect, 100V, 2.7A, 25W, DPAK Specifications

Structure	N-channel
Maximum drain-source voltage Usi, V	100
Maximum drain-source current at 25 C Isi max..A	4.3
Maximum gate-source voltage Uzi max., V	±10
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.54 Ohm / 2.6A, 5V
Maximum power dissipation Psi max..W	25
Slope of characteristic, S	2.3
Housing	DPAK(2 Leads+Tab)
Gate threshold voltage	2
Weight, g	0.4