KD221B, Diffusion silicon diode, 50 kHz
Images are for reference only,
see technical documentation
see technical documentation
SKU
11281
Number of diodes in the case
1
Diode configuration
Single
Housing
KD-4A
Weight, g
0.5
All parameters
KD221
pdf, 123 КБ
All documents
241 pcs. from the central warehouse, term 6 days
85 ֏
62 ֏
from 100 pcs. —
55 ֏
1 pcs.
amount of 62 ֏
Description
Reviews
Technical parameters
| Number of diodes in the case | 1 | |
| Diode configuration | Single | |
| Maximum constant reverse voltage, V | 200 | |
| Maximum (average) forward current per diode, If(AV) (A) | 0.5 | |
| Maximum forward voltage at Tj=25°C, Vf at If (V) | 1.4 | |
| Maximum reverse current at Tj=25°C, Ir at Vr (uA) | 50 | |
| PN junction operating temperature (°C) | -60…+85 | |
| Housing | KD-4A | |
| Weight, g | 0.5 |
Technical documentation
KD221
pdf, 123 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 28 April1 | free |
| HayPost | 2 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
