KP303A Nickel, Transistor, N-JFET, 25V, 0.2W, Idss=0.5...2mA [CT-1-12.]

Images are for reference only,
see technical documentation

SKU

2397

Brand

Russia

Structure

N-Channel

Housing

kt-112

Slope of characteristic, S

1…4

Weight, g

0.5

All parameters

pdf, 34 КБ

22 pcs. from stock Yerevan, 2 days

639 pcs. from the central warehouse, term 9 days

261 ֏

from 50 pcs. — 232 ֏

1 pcs. amount of 261 ֏

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Description

The KP303A transistor is a silicon field effect transistor.

Specifications

Designation: KP303A
Category: Transistors / Field Effect Transistors with Control PN Junction (JFETs)
Parameters: field
Housing: CT-1-12
Marking: "3A" + date of issue (conditional)
Terminal coating: nickel-plated
Weight: 0.3 g
Year of production: 1993
Manufacturer: Photon
Unit of measurement: pcs

Designation system: prefix "K" is a widely used product.

Structure	N-Channel
Housing	kt-112
Maximum drain-source voltage Usi, V	25
Maximum drain-source current at 25 C Isi max..A	0.02
Maximum gate-source voltage Uzi max., V	±30
Maximum power dissipation Psi max..W	0.2
Slope of characteristic, S	1…4
Weight, g	0.5