KP501A, Transistor, N-channel with an insulated gate [TO-92 / KT-26]
Images are for reference only,
see technical documentation
see technical documentation
SKU
2834
Brand
Structure
N-channel
Slope of characteristic, S
100
Housing
kt-26
Weight, g
0.3
All parameters
kp501
pdf, 178 КБ
All documents
20 pcs. from stock Yerevan, Today
4754 pcs. from the central warehouse, term 11 days
243 ֏
159 ֏
from 100 pcs. —
133 ֏
1 pcs.
amount of 159 ֏
Field MOSFET Transistor N-channel 240V 10 Ohm
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 240 | |
| Maximum drain-source current at 25 C Isi max..A | 1 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 10 Ohm / 0.25A, 10V | |
| Maximum power dissipation Psi max..W | 0.5 | |
| Slope of characteristic, S | 100 | |
| Housing | kt-26 | |
| Weight, g | 0.3 |
Technical documentation
Video
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | Today1 | free |
| HayPost | 17 November1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg






