Home › Catalog › Electronic components › Transistors › Bipolar transistors (BJTs) › Russia › KT117A, Single-junction transistor with ...

KT117A, Single-junction transistor with N-base of low power [metal]

Images are for reference only,
see technical documentation

SKU

10953

Brand

Russia

Structure

n-base

Maximum power dissipation, W

0.3

Housing

kt-1-7 (to-18)

Weight, g

0.45

All parameters

48 pcs. from the central warehouse, term 6 days

2 580 ֏

from 15 pcs. — 2 330 ֏

1 pcs. amount of 2 580 ֏

Description

Structure	n-base
Max. ex. k-b at a given reverse current k and open circuit e. (Ukbo max), V	30
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V	30
Maximum allowable current to (Ik max. A)	0.05
Static current transfer ratio h21e min	0.5…0.7
Cutoff frequency of current transfer ratio fgr.MHz	0.2
Maximum power dissipation, W	0.3
Housing	kt-1-7 (to-18)
Weight, g	0.45