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KT3102B, NPN 0.1A 30V hFE Transistor=200...500 [TO-18.]

Images are for reference only,
see technical documentation

SKU

9235

Brand

Russia

Structure

npn

Maximum power dissipation, W

0.25

Housing

TO-18/CT-1-7

Weight, g

0.5

All parameters

KT3102

pdf, 119 КБ

All documents

94 pcs. from the central warehouse, term 11 days

1 050 ֏

from 15 pcs. — 900 ֏

1 pcs. amount of 1 050 ֏

Description Reviews

CT series transistors are silicon bipolar semiconductor devices. The special feature is the presence in the structure of three alternating regions with electronic and hole conduction: collector, base and emitter, as well as two p—n junctions between them.
They are used in radio engineering and electronic equipment.

Technical parameters

Structure	npn
Max. ex. k-b at a given reverse current k and open circuit e. (Ukbo max), V	30
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V	30
Maximum allowable current to (Ik max. A)	0.1
Static current transfer ratio h21e min	200
Static current transfer coefficient h21e max	500
Cutoff frequency of current transfer ratio fgr.MHz	300
Maximum power dissipation, W	0.25
Housing	TO-18/CT-1-7
Weight, g	0.5