KT812B, NPN Transistor 8A 300V 50W hFE= 4 [TO-3.]
![Photo 1/4 KT812B, NPN Transistor 8A 300V 50W hFE= 4 [TO-3.]](https://static.chipdip.ru/lib/330/DOC005330076.jpg)
Images are for reference only,
see technical documentation
see technical documentation
SKU
2059
Brand
Russia
Structure
npn
Maximum power dissipation, W
50
Housing
kt-9
Weight, g
1
All parameters
Technical information
pdf, 803 КБ
Out of stock. Price and delivery time on request
1 390 ֏
1 pcs.
amount of 1 390 ֏
Alternative offers5
The same product with different prices and delivery dates
Description
Reviews
P-n-p complementary transistor with KT805, metal. body. for ULF
Technical parameters
| Structure | npn | |
| Max. ex. k-b at a given reverse current k and open circuit e. (Ukbo max), V | 300 | |
| Maximum allowable current to (Ik max. A) | 8 | |
| Static current transfer ratio h21e min | 4 | |
| Cutoff frequency of current transfer ratio fgr.MHz | 3 | |
| Maximum power dissipation, W | 50 | |
| Housing | kt-9 | |
| Weight, g | 1 |
Technical documentation
Technical information
pdf, 803 КБ
