CT853V, PNP Darlington Transistor 8A 60V 60W hFE=750(min) [CT-28-2 / TO-220.]

CT853V, PNP Darlington Transistor 8A 60V 60W hFE=750(min) [CT-28-2 / TO-220.]
Images are for reference only,
see technical documentation
SKU
10059
Brand
Russia
Structure
pnp darlington
Maximum power dissipation, W
60
Housing
kt-28-2 (to-220)
Weight, g
2.5
All parameters
kt853
pdf, 62 КБ
118 pcs. from the central warehouse, term 11 days
194 ֏
from 15 pcs.180 ֏
1 pcs. amount of 194 ֏
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CT series transistors are silicon bipolar semiconductor devices. The special feature is the presence in the structure of three alternating regions with electronic and hole conduction: collector, base and emitter, as well as two p—n junctions between them.
They are used in radio engineering and electronic equipment.

Technical parameters

Structure pnp darlington
Max. ex. k-b at a given reverse current k and open circuit e. (Ukbo max), V 60
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V 60
Maximum allowable current to (Ik max. A) 8
Static current transfer ratio h21e min 750
Cutoff frequency of current transfer ratio fgr.MHz 7
Maximum power dissipation, W 60
Housing kt-28-2 (to-220)
Weight, g 2.5

Technical documentation

kt853
pdf, 62 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 24 November1 free
HayPost 28 November1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg