CT853V, PNP Darlington Transistor 8A 60V 60W hFE=750(min) [CT-28-2 / TO-220.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
10059
Brand
Russia
Structure
pnp darlington
Maximum power dissipation, W
60
Housing
kt-28-2 (to-220)
Weight, g
2.5
All parameters
kt853
pdf, 62 КБ
118 pcs. from the central warehouse, term 11 days
194 ֏
from 15 pcs. —
180 ֏
1 pcs.
amount of 194 ֏
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CT series transistors are silicon bipolar semiconductor devices. The special feature is the presence in the structure of three alternating regions with electronic and hole conduction: collector, base and emitter, as well as two p—n junctions between them.
They are used in radio engineering and electronic equipment.
They are used in radio engineering and electronic equipment.
Technical parameters
| Structure | pnp darlington | |
| Max. ex. k-b at a given reverse current k and open circuit e. (Ukbo max), V | 60 | |
| Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V | 60 | |
| Maximum allowable current to (Ik max. A) | 8 | |
| Static current transfer ratio h21e min | 750 | |
| Cutoff frequency of current transfer ratio fgr.MHz | 7 | |
| Maximum power dissipation, W | 60 | |
| Housing | kt-28-2 (to-220) | |
| Weight, g | 2.5 |
Technical documentation
kt853
pdf, 62 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 24 November1 | free |
| HayPost | 28 November1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg




