MMBFJ175LT1G, Транзистор P-JFET 25В 0.225Вт [SOT-23-3]

Фото 1/5 MMBFJ175LT1G, Транзистор P-JFET 25В 0.225Вт [SOT-23-3]
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Номенклатурный номер: 9001185655

Описание

TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:7mA; Zero Gate Voltage Drain Current Idss Max:60mA; Gate-Source Cutoff Voltage Vgs(off) Max:6V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Max:11pF; Current Idss Max:60mA; Current Idss Min:7mA; Drain Source Voltage Vds:-30V; No. of Pins:3Pins; On State Resistance Max:125ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:225mW; Power Dissipation Ptot Max:225mW; SMD Marking:6W; Termination Type:Surface Mount Device; Transistor Polarity:P Channel; Voltage Vgs Off Min:3V

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Channel Type P
Configuration Single
Maximum Gate Source Voltage (V) -25
Maximum Drain Gate Voltage (V) 25
Maximum Power Dissipation (mW) 225
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Pin Count 3
Supplier Package SOT-23
Standard Package Name SOT
Military No
Mounting Surface Mount
Package Height 0.94
Package Length 2.9
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Вес, г 0.1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet MMBFJ175LT1G
pdf, 216 КБ
MMBFJ175LT1
pdf, 110 КБ