RFD16N05LSM9A, N-MOSFET Transistor 60V 16A [DPAK]
![RFD16N05LSM9A, N-MOSFET Transistor 60V 16A [DPAK]](https://static.chipdip.ru/lib/294/DOC005294472.jpg)
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see technical documentation
see technical documentation
2422 pcs. from the central warehouse, term 6 days
112 ֏
from 50 pcs. —
104 ֏
1 pcs.
amount of 112 ֏
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Description
Reviews
Technical parameters
| Structure | MOSFET | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 9 | |
| Maximum gate-source voltage Uzi max., V | ±20V | |
| Maximum power dissipation Psi max..W | 60 | |
| Weight, g | 0.45 |
Technical documentation
RFD16N05LSM9A
pdf, 488 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 28 April1 | free |
1 estimated delivery date depends on the date of payment or order confirmation
