SI2301A, Transistor P-MOSFET 20V 2.8A [SOT-23-3]

SI2301A, Transistor P-MOSFET 20V 2.8A [SOT-23-3]
Images are for reference only,
see technical documentation
SKU
9001106063
Structure
P-channel
Slope of characteristic, S
6.5
Housing
SOT-23-3
Weight, g
0.05
All parameters
Datasheet UMW SI2301A
pdf, 768 КБ
4167 pcs. from the central warehouse, term 10 days
14 ֏
from 100 pcs.12 ֏
1 pcs. amount of 14 ֏
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Description of SOT23 Integrated Circuits
Structure P-channel
Maximum drain-source voltage Usi, V 20
Maximum drain-source current at 25 C Isi max..A 2.8
Maximum gate-source voltage Uzi max., V ±12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 85 mOhm/2.8A, 4.5V
Maximum power dissipation Psi max..W 0.4
Slope of characteristic, S 6.5
Housing SOT-23-3
Weight, g 0.05
Datasheet UMW SI2301A
pdf, 768 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg