SI2301B, Transistor P-MOSFET 20V 2.5A [SOT-23-3]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001106064
Structure
P-channel
Slope of characteristic, S
4
Housing
SOT-23-3
Weight, g
0.05
All parameters
Datasheet UMW SI2301B
pdf, 877 КБ
3000 pcs. from the central warehouse, term 10 days
13 ֏
from 100 pcs. —
11 ֏
1 pcs.
amount of 13 ֏
Alternative offers1
The same product with different prices and delivery dates
Description
Reviews
Description of Integrated circuits SOT23
Technical parameters
| Structure | P-channel | |
| Maximum drain-source voltage Usi, V | 20 | |
| Maximum drain-source current at 25 C Isi max..A | 2.5 | |
| Maximum gate-source voltage Uzi max., V | ±8 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 95 mOhm/2.8A, 4.5V | |
| Maximum power dissipation Psi max..W | 0.35 | |
| Slope of characteristic, S | 4 | |
| Housing | SOT-23-3 | |
| Weight, g | 0.05 |
Technical documentation
Datasheet UMW SI2301B
pdf, 877 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 23 February1 | free |
| HayPost | 27 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



