SI2308A, Transistor N-MOSFET 60V 2A [SOT-23-3]

SI2308A, Transistor N-MOSFET 60V 2A [SOT-23-3]
Images are for reference only,
see technical documentation
SKU
9001106072
Structure
N-channel
Slope of characteristic, S
4.6
Housing
SOT-23-3
Weight, g
0.05
All parameters
Datasheet UMW SI2308A
pdf, 1449 КБ
3718 pcs. from the central warehouse, term 10 days
27 ֏
from 100 pcs.22 ֏
1 pcs. amount of 27 ֏
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Description of the SOT23 MOSFET Transistor
Structure N-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 3
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 80 mOhm/3A, 10V
Maximum power dissipation Psi max..W 1.25
Slope of characteristic, S 4.6
Housing SOT-23-3
Weight, g 0.05
Datasheet UMW SI2308A
pdf, 1449 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg