SI2308BDS, Transistor TrenchFET N-channel 60V 4A [SOT-23-3 / TO-236]

SI2308BDS, Transistor TrenchFET N-channel 60V 4A [SOT-23-3 / TO-236]
Images are for reference only,
see technical documentation
5952 pcs. from the central warehouse, term 5-7 working days
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106 ֏
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SKU: 9000982600
Brand / Manufacturer: Vbsemi Electronics Co., Ltd.


MOSFET, N CH, 60V, 2.3A, SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.09W; Transistor Case Style:TO-236; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:1.9A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V

Technical parameters

Structure n-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 3.8
Maximum gate-source voltage Uzi max., V 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.086 ohm/1.7A, 4.5V
Maximum power dissipation Psi max..W 1.66
Slope of characteristic, S 5
Housing SOT-23-3
Weight, g 0.05

Technical documentation

Datasheet SI2308BDS
pdf, 1472 КБ
pdf, 250 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 9 October1 free
HayPost 12 October1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg