SI2308BDS, Transistor TrenchFET N-channel 60V 4A [SOT-23-3 / TO-236]
![SI2308BDS, Transistor TrenchFET N-channel 60V 4A [SOT-23-3 / TO-236]](https://static.chipdip.ru/lib/255/DOC005255375.jpg)
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see technical documentation
see technical documentation
5952 pcs. from the central warehouse, term 5-7 working days
170 ֏
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Description
MOSFET, N CH, 60V, 2.3A, SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.09W; Transistor Case Style:TO-236; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:1.9A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V
Technical parameters
| Structure | n-channel | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 3.8 | |
| Maximum gate-source voltage Uzi max., V | 20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.086 ohm/1.7A, 4.5V | |
| Maximum power dissipation Psi max..W | 1.66 | |
| Slope of characteristic, S | 5 | |
| Housing | SOT-23-3 | |
| Weight, g | 0.05 | |
Technical documentation
Datasheet SI2308BDS
pdf, 1472 КБ
Documentation
pdf, 250 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 9 October1 | free |
| HayPost | 12 October1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
