SI2309A, Transistor P-MOSFET 60V 1.25A [SOT-23-3]

Images are for reference only,
see technical documentation

SKU

9001106073

Brand

Structure

P-channel

Slope of characteristic, S

1.9

Housing

SOT-23-3

Weight, g

0.05

All parameters

pdf, 1985 КБ

2258 pcs. from the central warehouse, term 10 days

42 ֏

from 100 pcs. — 36 ֏

1 pcs. amount of 42 ֏

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Description

SOT-23 MOSFETs ROHS VDS (V) =-60V ID =-1.25 A (VGS =-10V) analog:SI2309A, UMWSI2309A

Structure	P-channel
Maximum drain-source voltage Usi, V	60
Maximum drain-source current at 25 C Isi max..A	1.25
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	340 mOhm/1.25A, 10V
Maximum power dissipation Psi max..W	1.25
Slope of characteristic, S	1.9
Housing	SOT-23-3
Weight, g	0.05