SI2310A, Transistor N-MOSFET 60V 3A [SOT-23-3]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001106074
Structure
N-channel
Slope of characteristic, S
5
Housing
SOT-23-3
Weight, g
0.05
All parameters
Datasheet UMW SI2310A
pdf, 503 КБ
6634 pcs. from the central warehouse, term 10 days
21 ֏
from 100 pcs. —
19 ֏
1 pcs.
amount of 21 ֏
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Description
Reviews
60V 3A 90mR@10V, 3A 1.38W 3V@250?A N Channel SOT-23 MOSFETs ROHS VDS (V)=60V ID=3A analog:SI2310A, UMWSI2310A
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 3 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 80 mOhm/3A, 10V | |
| Maximum power dissipation Psi max..W | 1.38 | |
| Slope of characteristic, S | 5 | |
| Housing | SOT-23-3 | |
| Weight, g | 0.05 |
Technical documentation
Datasheet UMW SI2310A
pdf, 503 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 23 February1 | free |
| HayPost | 27 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



