SIHG30N60E-GE3, Transistor N-MOSFET 600V 29A 250W [TO-247AC]

Photo 1/3 SIHG30N60E-GE3, Transistor N-MOSFET 600V 29A 250W [TO-247AC]
Images are for reference only,
see technical documentation
SKU
9001131884
Structure
N-channel
Slope of characteristic, S
5.4
Housing
TO-247AC
Weight, g
4.9
All parameters
Datasheet
pdf, 190 КБ
All documents
132 pcs. from the central warehouse, term 10 days
1 790 ֏
from 100 pcs.1 630 ֏
1 pcs. amount of 1 790 ֏
Alternative offers2
The same product with different prices and delivery dates
Industrial Power Solutions

Vishay offers one of the industry's broadest range of semiconductor and passive components for industrial power supplies. Vishay's product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors and inductors.
Structure N-channel
Maximum drain-source voltage Usi, V 600
Maximum drain-source current at 25 C Isi max..A 29
Maximum gate-source voltage Uzi max., V ±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.104 ohm/15A/10V
Maximum power dissipation Psi max..W 250
Slope of characteristic, S 5.4
Housing TO-247AC
Weight, g 4.9
Datasheet
pdf, 190 КБ
Datasheet SIHG30N60E
pdf, 181 КБ
Datasheet SIHG30N60E-GE3
pdf, 158 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg