SKM100GB125DN, IGBT Module, 2-transistor, 1200V, 100A [D-93]
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see technical documentation
see technical documentation
SKU
105219695
Brand
Structure
half-bridge
Maximum CE voltage, V
1200
Housing
D-93
Структура
half-bridge
Макс.напр.к-э,В
1200
Температурный диапазон,С
-40…150
All parameters
Datasheet
pdf, 164 КБ
All documents
9 pcs. from the central warehouse, term 10 days
38 500 ֏
from 2 pcs. —
37 500 ֏
1 pcs.
amount of 38 500 ֏
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Description
Power module IGBT N-channel 1200V 100A 7-Pin Case D-93
Technical parameters
| Structure | half-bridge | |
| Maximum CE voltage, V | 1200 | |
| Maximum CE current at 25 ° C, A | 100 | |
| Operating temperature (Tj), ° C | -40…+150 | |
| Housing | D-93 | |
| Структура | half-bridge | |
| Наличие схем управления/защиты в составе модуля | No | |
| Макс.напр.к-э,В | 1200 | |
| Номинальный ток одиночного тр-ра,А | 200 | |
| Максимально допустимый импульсный ток э,А | 400 | |
| Прямое падение напряжения коллектор-эмиттер 125С,В | 2.5 | |
| Температурный диапазон,С | -40…150 | |
| Weight, g | 160 |
Technical documentation
Datasheet
pdf, 164 КБ
Datasheet
pdf, 637 КБ
Datasheet
pdf, 132 КБ
Datasheet
pdf, 164 КБ
Datasheet SKM100GB125DN
pdf, 665 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 30 June1 | free |
| HayPost | 4 July1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
