STD10NF10L, Transistor N-MOSFET 100V 15A [TO-252]

STD10NF10L, Transistor N-MOSFET 100V 15A [TO-252]
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see technical documentation
SKU
9001106078
Structure
N-channel
Slope of characteristic, S
2
Housing
dpak
Weight, g
0.4
All parameters
Datasheet UMW STD10NF10
pdf, 611 КБ
1873 pcs. from the central warehouse, term 7 days
153 ֏
from 50 pcs.138 ֏
1 pcs. amount of 153 ֏
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TO-252 N-Channel MOSFETs ROHS VDS = 100V, ID =15A analog:STD10NF10L
Structure N-channel
Maximum drain-source voltage Usi, V 100
Maximum drain-source current at 25 C Isi max..A 15
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 95 mOhm/10A, 10V
Maximum power dissipation Psi max..W 55
Slope of characteristic, S 2
Housing dpak
Weight, g 0.4
Datasheet UMW STD10NF10
pdf, 611 КБ

Delivery to Yerevan

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2 for parcels weighing up to 1 kg