Schottky diode MBRA1H100T3G

Images are for reference only,
see technical documentation
see technical documentation
35 pcs., term 6 weeks
406 ֏
1 pcs.
amount of 406 ֏
Description
Диоды\Диоды Шоттки
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange.
Technical parameters
Weight, g | 0.1 |
Technical documentation
Datasheet
pdf, 126 КБ
Imported diodes
pdf, 304 КБ
Delivery terms
Delivery to Yerevan
Office CHIP AND DIP | 25 March1 | free |
HayPost | 28 March1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg