Schottky diode MBRA1H100T3G

Schottky diode MBRA1H100T3G
Images are for reference only,
see technical documentation
35 pcs., term 6 weeks
406 ֏
1 pcs. amount of 406 ֏
SKU: 8004209045

Description

Диоды\Диоды Шоттки
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange.

Technical parameters

Weight, g 0.1

Technical documentation

Datasheet
pdf, 126 КБ
Imported diodes
pdf, 304 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 25 March1 free
HayPost 28 March1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg