KY2002KNC, DFN1006-3L MOSFETs

SKU
8015828211
Gate threshold voltage
650mV@250uA
Weight, g
0.01
All parameters
Datasheet
pdf, 2071 КБ
4520 pcs., term 4-5 weeks
30 ֏
Multiplicity of order 20 pcs.
from 200 pcs.25 ֏
from 600 pcs.18 ֏
from 2000 pcs.16 ֏
20 pcs. amount of 600 ֏

Description

20V 750mA 250mOhm@4.5V,0.5A 150mW 650mV@250uA DFN-3L(1x0.6) MOSFETs ROHS

Technical parameters

Maximum drain-source voltage Usi, V 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 250mOhm@4.5V, 0.5A
Gate threshold voltage 650mV@250uA
Weight, g 0.01

Technical documentation

Datasheet
pdf, 2071 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 9 August1 free
HayPost 12 August1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg