IRF840-IR
Images are for reference only,
see technical documentation
see technical documentation
49 pcs. from the central warehouse, term 11 days
102 ֏
1 pcs.
amount of 102 ֏
Description
Field effect transistor (MOSFET) N-channel, 500 V, 8 A, TO-220
Technical parameters
| Maximum drain-source voltage Usi, V | 500 | |
| Maximum drain-source current at 25 C Isi max..A | 8 | |
| Housing | to-220 | |
| Weight, g | 2.79 |
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 3 February1 | free |
| HayPost | 7 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
